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- W2193271775 abstract "Piezoelectric AlN layer grain orientation, grown by room temperature reactive sputtering, is analyzed by transmission electron microscopy (TEM).Two typesof samples are studied: (i) AlN grown on well-polished NCD (nano-crystalline diamond) diamond, (ii) AlN grown on an up-side down NCD layer previously grown on a Si substrate, i.e. diamond surface as smooth as that of Si substrates. The second set of sample show a faster lignment of their AlN grain caxis attributed to it smoother diamond free surface. No grain orientation relationship between diamond substrate grain and the AlN ones is evidenced, which seems to indicate the preponderance role of the surface substrate state." @default.
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- W2193271775 date "2014-01-01" @default.
- W2193271775 modified "2023-09-22" @default.
- W2193271775 title "TEM study of the AlN grain orientation grown on NCD diamond substrate" @default.
- W2193271775 hasPublicationYear "2014" @default.
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