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• W2193455502 abstract "Abstract Silicon carbide (SiC) is a good candidate for power semiconductor devices because it has excellent physical and chemical properties and thermal stability that can meet the requirements needed for high voltage, high power, high temperature and fast switching applications. In this paper, forward and reverse current voltage characteristics of 4H-SiC/Pt Schottky barrier diode (SBD) are simulated using Synopsys TCAD Simulator. The influence of different parameters such as epilayer doping concentrations (3 x 10 15 and 9 x 10 15 cm -3 ) and the effect of temperature (300- 1000 K) are discussed. The temperature dependent forward characteristics are simulated with different doping concentrations. The results show large current difference between low and high temperatures at doping concentration of 3 x 10 15 cm -3 ." @default.
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• W2193455502 date "2015-01-01" @default.
• W2193455502 modified "2023-09-25" @default.
• W2193455502 title "Simulations and Analysis of Electrical Characteristics of 4H-SiC/Pt Schottky Barrier Diode" @default.
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• W2193455502 doi "https://doi.org/10.1016/j.matpr.2015.11.026" @default.
• W2193455502 hasPublicationYear "2015" @default.
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