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- W2194727116 abstract "To improve the switching characteristics of conventional structure IGBT, a new trench type bidirectional insulated gate bipolar transistor (IGBT) is proposed. The main feature of this structure is introducing a cell in collector of conventional trench IGBT. The new type IGBT reduce both turn-on and turn-off losses because double-gate IGBT can accelerate carrier extraction speed. By building the device simulation DC/AC circuit of dynamic characteristics, the turn-on time is 0.12μs and turn-off time is 5.1ns. Compared with conventional IGBT, the new type IGBT's turn-on and turn-off loss have a great reduce." @default.
- W2194727116 created "2016-06-24" @default.
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- W2194727116 date "2015-01-01" @default.
- W2194727116 modified "2023-09-27" @default.
- W2194727116 title "Research on Dynamic Characteristics of Trench Type Bidirectional IGBT" @default.
- W2194727116 cites W1966018093 @default.
- W2194727116 doi "https://doi.org/10.2991/icmmcce-15.2015.457" @default.
- W2194727116 hasPublicationYear "2015" @default.
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