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• W2194920778 endingPage "1125" @default.
• W2194920778 startingPage "1118" @default.
• W2194920778 abstract "Molybdenum ditelluride (α-MoTe2) is an emerging transition-metal dichalcogenide (TMD) semiconductor that has been attracting attention due to its favorable optical and electronic properties. Field-effect transistors (FETs) based on few-layer α-MoTe2 nanosheets have previously shown ambipolar behavior with strong p-type and weak n-type conduction. We have employed a direct imprinting technique following mechanical nanosheet exfoliation to fabricate high-performance complementary inverters using α-MoTe2 as the semiconductor for the p-channel FETs and MoS2 as the semiconductor for the n-channel FETs. To avoid ambipolar behavior and produce α-MoTe2 FETs with clean p-channel characteristics, we have employed the high-workfunction metal platinum for the source and drain contacts. As a result, our α-MoTe2 nanosheet p-channel FETs show hole mobilities up to 20 cm(2)/(V s), on/off ratios up to 10(5), and a subthreshold slope of 255 mV/decade. For our complementary inverters composed of few-layer α-MoTe2 p-channel FETs and MoS2 n-channel FETs we have obtained voltage gains as high as 33, noise margins as high as 0.38 VDD, a switching delay of 25 μs, and a static power consumption of a few nanowatts." @default.
• W2194920778 created "2016-06-24" @default.
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• W2194920778 date "2015-12-04" @default.
• W2194920778 modified "2023-10-14" @default.
• W2194920778 title "Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe₂ <i>p</i>-Channel and MoS₂ <i>n</i>-Channel Transistors" @default.
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• W2194920778 doi "https://doi.org/10.1021/acsnano.5b06419" @default.
• W2194920778 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/26631357" @default.
• W2194920778 hasPublicationYear "2015" @default.
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