Matches in SemOpenAlex for { <https://semopenalex.org/work/W219659658> ?p ?o ?g. }
Showing items 1 to 81 of
81
with 100 items per page.
- W219659658 abstract "We developed a double-recess etching process and a new Digital-Oxide-Deposition (DOD) technique to fabricate 180nm low-threshold GaN Metal-OxideSemiconductor Double Heterostructure Field Effect Transistors (MOS-DHFET). Two device layer structures, InGaN channel design and InGaN back-barrier design, were employed to improve the confinement of TwoDimensional Electron Gas (2DEG) and mitigate the short-channel effects. The devices exhibited high draincurrents of 1.3 A/mm and delivered RF powers of 3.1 W/mm at 26 GHz with a 35 V drain bias. A cutoff frequency of about 65 GHz and a maximum oscillation frequency of 94 GHz have been achieved. The subthreshold swing and the Drain Induced Barrier Lowering (DIBL) in those devices are less than 75 mV/decade and 80 mV/V, respectively. To further improve the confinement of 2DEG, we combined and optimized the InGaN channel design with the InGaN back-barrier design. We also developed a selective doping technique to reduce the high electrical field around the recessed gate and improve the electric field profile in the ungated drift region for supporting high voltage. In addition, the selective doping technique also leads to the reduction of parasitic drain and source resistance in deep-submicron GaN Heterostructure Field Effect Transistors (HFETs) and consequently improves the device RF characteristics." @default.
- W219659658 created "2016-06-24" @default.
- W219659658 creator A5035539856 @default.
- W219659658 creator A5068726114 @default.
- W219659658 creator A5084891340 @default.
- W219659658 date "2008-01-01" @default.
- W219659658 modified "2023-09-23" @default.
- W219659658 title "Deep Submicron GaN-based Heterostructure Field Effect Transistors with InGaN Channel and InGaN Back-barrier Designs" @default.
- W219659658 cites W1996730807 @default.
- W219659658 cites W2027995092 @default.
- W219659658 cites W2049877376 @default.
- W219659658 cites W2078588266 @default.
- W219659658 cites W2099064873 @default.
- W219659658 cites W2114751636 @default.
- W219659658 cites W2121962586 @default.
- W219659658 cites W2135780270 @default.
- W219659658 cites W2165932898 @default.
- W219659658 cites W2170311413 @default.
- W219659658 hasPublicationYear "2008" @default.
- W219659658 type Work @default.
- W219659658 sameAs 219659658 @default.
- W219659658 citedByCount "0" @default.
- W219659658 crossrefType "journal-article" @default.
- W219659658 hasAuthorship W219659658A5035539856 @default.
- W219659658 hasAuthorship W219659658A5068726114 @default.
- W219659658 hasAuthorship W219659658A5084891340 @default.
- W219659658 hasConcept C100460472 @default.
- W219659658 hasConcept C119599485 @default.
- W219659658 hasConcept C127413603 @default.
- W219659658 hasConcept C165801399 @default.
- W219659658 hasConcept C171250308 @default.
- W219659658 hasConcept C172385210 @default.
- W219659658 hasConcept C192562407 @default.
- W219659658 hasConcept C195370968 @default.
- W219659658 hasConcept C2779227376 @default.
- W219659658 hasConcept C2779833192 @default.
- W219659658 hasConcept C49040817 @default.
- W219659658 hasConcept C57863236 @default.
- W219659658 hasConcept C6142545 @default.
- W219659658 hasConcept C79794668 @default.
- W219659658 hasConceptScore W219659658C100460472 @default.
- W219659658 hasConceptScore W219659658C119599485 @default.
- W219659658 hasConceptScore W219659658C127413603 @default.
- W219659658 hasConceptScore W219659658C165801399 @default.
- W219659658 hasConceptScore W219659658C171250308 @default.
- W219659658 hasConceptScore W219659658C172385210 @default.
- W219659658 hasConceptScore W219659658C192562407 @default.
- W219659658 hasConceptScore W219659658C195370968 @default.
- W219659658 hasConceptScore W219659658C2779227376 @default.
- W219659658 hasConceptScore W219659658C2779833192 @default.
- W219659658 hasConceptScore W219659658C49040817 @default.
- W219659658 hasConceptScore W219659658C57863236 @default.
- W219659658 hasConceptScore W219659658C6142545 @default.
- W219659658 hasConceptScore W219659658C79794668 @default.
- W219659658 hasLocation W2196596581 @default.
- W219659658 hasOpenAccess W219659658 @default.
- W219659658 hasPrimaryLocation W2196596581 @default.
- W219659658 hasRelatedWork W1964613853 @default.
- W219659658 hasRelatedWork W1989284880 @default.
- W219659658 hasRelatedWork W1989778585 @default.
- W219659658 hasRelatedWork W2000752115 @default.
- W219659658 hasRelatedWork W2017429679 @default.
- W219659658 hasRelatedWork W2033218823 @default.
- W219659658 hasRelatedWork W2033294230 @default.
- W219659658 hasRelatedWork W2043999383 @default.
- W219659658 hasRelatedWork W2053887306 @default.
- W219659658 hasRelatedWork W2063697273 @default.
- W219659658 hasRelatedWork W2126828052 @default.
- W219659658 hasRelatedWork W2153157945 @default.
- W219659658 hasRelatedWork W2153886116 @default.
- W219659658 hasRelatedWork W2163500907 @default.
- W219659658 hasRelatedWork W2284720753 @default.
- W219659658 hasRelatedWork W2620681270 @default.
- W219659658 hasRelatedWork W2631351453 @default.
- W219659658 hasRelatedWork W2767785296 @default.
- W219659658 hasRelatedWork W2908965271 @default.
- W219659658 hasRelatedWork W3111930950 @default.
- W219659658 isParatext "false" @default.
- W219659658 isRetracted "false" @default.
- W219659658 magId "219659658" @default.
- W219659658 workType "article" @default.