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• W2197517056 abstract "This paper identifies the contributions of p—a—SiC:H layers and i—a—Si:H layers to the open circuit voltage of p—i—n type a—Si:H solar cells deposited at a low temperature of 125 °C. We find that poor quality p—a—SiC:H films under regular conditions lead to a restriction of open circuit voltage although the band gap of the i-layer varies widely. A significant improvement in open circuit voltage has been obtained by using high quality p—a—SiC:H films optimized at the low-power regime under low silane flow rates and high hydrogen dilution conditions." @default.
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• W2197517056 date "2011-08-01" @default.
• W2197517056 modified "2023-09-24" @default.
• W2197517056 title "Open-circuit voltage analysis of p—i—n type amorphous silicon solar cells deposited at low temperature" @default.
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• W2197517056 doi "https://doi.org/10.1088/1674-1056/20/8/087309" @default.
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