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• W2198740964 abstract "Phosphorus-doped BaFe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> As <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> (BaFe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> As <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> : P) epitaxial films were fabricated on (La, Sr)(Al, Ta)O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> single-crystal substrates, and their crystallinity, microstructure, and transport critical current density (J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> ) properties were characterized. Compared with those of previously reported BaFe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> As <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> : P epitaxial films on MgO substrates, a decrease in the self-field J <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>c</sub> and strong pinning properties along the c-axis under high magnetic fields were observed. These results can be understood by considering the poor crystallinity and the large density of the domain boundary pinning centers of the present films on (La, Sr)(Al, Ta)O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> , which would be caused by a thin reaction layer produced between the BaFe <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> As <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> : P film and the (La, Sr)(Al, Ta)O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> substrate." @default.
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• W2198740964 date "2015-06-01" @default.
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• W2198740964 title "Vortex Pinning Properties of Phosphorous-Doped <inline-formula> <tex-math notation=TeX>$hbox{BaFe}_{2}hbox{As}_{2}$</tex-math></inline-formula> Epitaxial Films: Comparison Between <inline-formula> <tex-math notation=TeX>$(hbox{La},hbox{Sr})(hbox{Al},hbox{Ta})hbox{O}_{3} $</tex-math></inline-formula> and MgO Substrates" @default.
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• W2198740964 doi "https://doi.org/10.1109/tasc.2014.2368073" @default.
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