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• W2199851172 abstract "La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunctions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field-induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 × 104% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications." @default.
• W2199851172 created "2016-06-24" @default.
• W2199851172 creator A5009626641 @default.
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• W2199851172 date "2012-04-01" @default.
• W2199851172 modified "2023-09-26" @default.
• W2199851172 title "Homogeneous interface-type resistance switching in Au/La 0.67 Ca 0.33 MnO 3 /SrTiO 3 /F:SnO 2 heterojunction memories" @default.
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• W2199851172 doi "https://doi.org/10.1088/1674-1056/21/4/047301" @default.
• W2199851172 hasPublicationYear "2012" @default.
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