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- W2200426187 abstract "Four factors impact high speed switching of silicon carbide (SiC) devices in voltage source converters, including limited gate driving capability, cross-talk, parasitics associated in switching loop, and parasitics of inductive load. This paper focuses on a solution to mitigate the adverse impact of the aforementioned factors. First, an intelligent gate drive is developed for gate driving capability enhancement and cross-talk suppression. Second, placement and layout design of power devices, gate drive, and power stage board are proposed to minimize parasitics for fast switching and over-voltage mitigation. Third, an auxiliary filter is designed to mitigate the negative impact of inductive load's parasitics during the switching transient. Finally, by utilizing all techniques developed above, a three-phase voltage source inverter with Cree 1200-V/20-A SiC MOSFETs is established. Test results show that the switching behavior of SiC devices in actual three-phase voltage source inverter fed motor drives can mostly repeat the switching performance tested by the optimally-designed double pulse test." @default.
- W2200426187 created "2016-06-24" @default.
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- W2200426187 date "2015-11-01" @default.
- W2200426187 modified "2023-10-16" @default.
- W2200426187 title "Realization of high speed switching of SiC power devices in voltage source converters" @default.
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- W2200426187 doi "https://doi.org/10.1109/wipda.2015.7369272" @default.
- W2200426187 hasPublicationYear "2015" @default.
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