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• W2201636739 abstract "The carrier lifetime of CdTe/MgCdTe double heterostructures has been enhanced significantly up to 2.1 µs through using 30 nm Mg0.48Cd0.52Te barriers. Temperature-dependent photoluminescence measurements indicate that the radiative recombination contributes significantly to the total recombination at room temperature, and the internal quantum efficiency is estimated to be 40 %. A radiative and a non-radiative lifetimes have thus been calculated to be 5.25 µs and 3.5 µs, respectively. The interface recombination velocity of CdTe/Mg0.48Cd0.52Te is determined to be smaller than 2.7 cm/s, which is better or very close to the best values reported for GaAs/AlGaAs and GaAs/Ga0.5In0.5P double heterostructures." @default.
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• W2201636739 date "2015-06-01" @default.
• W2201636739 modified "2023-09-24" @default.
• W2201636739 title "Significantly improved carrier lifetime and reduced interface recombination velocity for CdTe/MgCdTe double heterostructures" @default.
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• W2201636739 doi "https://doi.org/10.1109/pvsc.2015.7356225" @default.
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