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- W2202088811 abstract "Based on the simulated and measured data on the endurance of a 2T-SONOS memory, its electrical properties have been investigated. It has been shown that with the P/E cycling number increased, threshold voltages (V t s) increase gradually both for programed and erased cells, and transconductances (G m s) continue to degrade. All these measurement trends are well explained by our simulation results." @default.
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- W2202088811 date "2013-07-01" @default.
- W2202088811 modified "2023-09-24" @default.
- W2202088811 title "2T-SONOS 셀의 Endurance 특성고찰" @default.
- W2202088811 hasPublicationYear "2013" @default.
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