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• W2202848131 abstract "Abstract This paper reports on an industrially applicable approach to create efficient Al-doped p + regions alloyed from screen-printed pastes for the application as rear emitters in n -type silicon solar cells. The influences of polished and pyramidal rear surfaces on the formation of Si–Al alloy and saturation current are discussed. We demonstrate that a thin SiO 2 layer on Si–Al interface can mitigate the inhomogeneous Al diffusion during alloying process and develop the transport properties. Furthermore, we apply this SiO 2 layer in our n + np + solar cells, which exhibit lower series resistance and fine IQE response as a result of the improved Al emitter quality. For large-area n -type silicon solar cells (239 cm 2 ) with a full-area Al- p + rear emitter, we achieved an 18.8% efficient cell with an open-circuit voltage of 637.4 mV. Remarkable gains of 1.6% on average efficiency, 0.8 mA/cm 2 on J sc , 8.6 mV on open-circuit voltage and 4.1% on FF are obtained, comparing with the solar cells fabricated by standard industrial process." @default.
• W2202848131 created "2016-06-24" @default.
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• W2202848131 date "2015-08-01" @default.
• W2202848131 modified "2023-09-22" @default.
• W2202848131 title "Quality improvement of screen-printed Al emitter by using SiO2 interfacial layer for industrial n-type silicon solar cells" @default.
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• W2202848131 doi "https://doi.org/10.1016/j.solener.2015.04.043" @default.
• W2202848131 hasPublicationYear "2015" @default.
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