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- W2202853578 abstract "A three-state model is used to explore the influence of the accelerated formation of recombination-active defect complexes on the mitigation of light-induced degradation in p-type Czochralski silicon. Defect formation is observed to be a critical factor for the speed at which the defects can be hydrogenated. Defect formation also plays a critical role in determining the effectiveness of hydrogenation at elevated temperatures. It is observed that under conventional conditions, at a processing temperature of 200 °C, approximately 100 s are required to form- and hydrogenate 99% of possible defects. The improved effectiveness of the hydrogenation of light-induced defects at elevated temperatures as recently reported on finished standard screen printed solar cells within 8 s is consistent with a substantial acceleration of defect formation." @default.
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- W2202853578 date "2015-06-01" @default.
- W2202853578 modified "2023-09-25" @default.
- W2202853578 title "Implications of accelerated B-O complex formation for mitigating LID in Czochralski silicon" @default.
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- W2202853578 doi "https://doi.org/10.1109/pvsc.2015.7355689" @default.
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