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• W2206622196 abstract "The quality of GaAsBi samples grown under various conditions were investigated by photoluminescence (PL) and atomic force microscopy (AFM). The samples were grown by molecular beam epitaxy at a rate of 0.36 and 0.61 μm/h. For each growth rates, three samples were grown under different Bi fluxes. For samples grown at a rate of 0.36 μm/h, the PL peak wavelength was red-shifted from 1103 to 1241 nm as the Bi flux was increased from 0.53 to 1.0 × 10−7 mBar. However, for sample grown with the highest Bi flux, the optical quality degraded showing a weak and broad PL spectrum. The AFM image shows that the sample grown with Bi flux of 0.53 × 10−7 mBar has a smooth surface with rms roughness of 0.78 nm. However, the presence of Bi droplets was observed for samples grown with higher Bi fluxes. A similar PL trend was also observed for samples grown at 0.61 μm/h. The results indicate that high Bi flux may increase the incorporation of Bi into GaAs but it is limited by the formation of Bi droplets." @default.
• W2206622196 created "2016-06-24" @default.
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• W2206622196 date "2015-08-01" @default.
• W2206622196 modified "2023-09-25" @default.
• W2206622196 title "The effect of growth conditions to the optical quality of GaAsBi alloy" @default.
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• W2206622196 doi "https://doi.org/10.1109/rsm.2015.7355020" @default.
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