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- W2206749794 abstract "A diode-switch PoRAM was developed for a 0.18 ㎛ CMOS technology. Instead of the conventional MOS-switch, PoRAM uses a diode-switch as the cell switch for high density in memory (aimed minimal device feature of 4F²). In this paper, a core configuration, read/program/erase techniques and a verify-algorithm for the diode-switch PoRAM are proposed. The diode-switch PoRAM which has a memory margin (I on /I off ratio) of approximately 1×10³ achieved a sensing time of 10 ㎱ through the proposed schemes. All proposed schemes were verified by a CADENCE spectre." @default.
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- W2206749794 date "2009-07-01" @default.
- W2206749794 modified "2023-09-24" @default.
- W2206749794 title "Read/Program/Erase operation and verify-algorithm for 1D1R Polymer RAM" @default.
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