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- W220716621 abstract ": For the first time, the figures of merit M2 and the photoelastic constants of the two most developped III-V semiconductors are here determined, for photon energies close to the band gap i.e., in the so-called “resonant acousto-optical” conditions. Strong enhancement are observed for certain M2. As the optical absorption increases simultaneously to M2 when one approaches the bandgap, we better consider a more appropriate figure of merit Meff=M2 where the crystal transmission T is taken into account. On the basis of the experimental measurements, suggestions are made for acousto-optical device improvements." @default.
- W220716621 created "2016-06-24" @default.
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- W220716621 date "1993-01-01" @default.
- W220716621 modified "2023-09-27" @default.
- W220716621 title "Resonant Acousto-optical Properties of GaAs and InP and Application to Device Improvement" @default.
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- W220716621 doi "https://doi.org/10.1016/b978-0-7506-1877-9.50025-1" @default.
- W220716621 hasPublicationYear "1993" @default.
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