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• W2207364310 abstract "Abstract The 120-nm-thick Co-doped ZnO (CZO) dilute magnetic semiconductor films were grown by pulsed laser deposition at various substrate temperatures (T s ) of 100–700 °C. During the film's growth, Ar or O 2 or Ar/O 2 -mixed gas atmosphere was used. Hall measurements indicate the CZO films prepared in Ar atmosphere possess the lower resistivity. Then, the microstructural, optical, electrical and magnetic properties of the CZO films deposited in Ar atmosphere were investigated in detail. For the deposition in Ar atmosphere, the lowest resistivity of 4.30 × 10 −2  Ω-cm appeared in the 400 °C-grown CZO film since it had more oxygen vacancies with 0 charge state (V O 0 ). As the T s was raised to 100–300 °C, the CZO films had low mobilities of 5.1–10.7 cm 2 /V. This is attributed to the formation of oxygen vacancies with 2+ charge state (V O 2+ ), resulting from the appearance of lattice distortions in these films. A significant relaxation of lattice distortion occurred in the 400 °C-grown CZO film, causing the efficient reduction in the amount of V O 2+ . Therefore, the 400 °C-grown film had a relatively high mobility of 21.0 cm 2 /V. With increasing the T s to 400–700 °C, the transmittances (@450 nm) of 84.1%–95.8% were obtained in the CZO films. Furthermore, the saturation magnetization values of 100, 400 and 700 °C-grown CZO films were 2.74 × 10 −5 , 3.37 × 10 −5 and 5.33 × 10 −5  emu, respectively. These results suggest the CZO films are highly potential for spintronic and optoelectronic applications, especially for the 400 °C-grown film." @default.
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• W2207364310 date "2016-04-01" @default.
• W2207364310 modified "2023-10-18" @default.
• W2207364310 title "Co-doped ZnO dilute magnetic semiconductor thin films by pulsed laser deposition: Excellent transmittance, low resistivity and high mobility" @default.
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• W2207364310 doi "https://doi.org/10.1016/j.jallcom.2015.12.101" @default.
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