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- W2207960498 abstract "A silicon carbide (SiC) based metal semiconductor field effect transistor (MESFET) is fabricated by using a standard SiC MESFET structure with the application of a dual p-buffer layer and a multi-recessed gate to the process for an S-band power amplifier. The lower doped upper-buffer layer serves to maintain the channel current, while the higher doped lower-buffer layer is used to provide excellent electron confinement in the channel layer. A 20-mm gate periphery SiC MESFET biased at a drain voltage of 85 V demonstrates a pulsed wave saturated output power of 94 W, a linear gain of 11.7 dB, and a maximum power added efficiency of 24.3% at 3.4 GHz. These results are improved compared with those of the conventional single p-buffer MESFET fabricated in this work using the same process. A radio-frequency power output greater than 4.7 W/mm is achieved, showing the potential as a high-voltage operation device for high-power solid-state amplifier applications." @default.
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- W2207960498 date "2013-01-01" @default.
- W2207960498 modified "2023-09-24" @default.
- W2207960498 title "High-power SiC MESFET using a dual p-buffer layer for an S-band power amplifier" @default.
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- W2207960498 doi "https://doi.org/10.1088/1674-1056/22/1/017302" @default.
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