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• W2208583901 abstract "Lateral Schottky barrier diodes (SBDs) on AlGaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmic contact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V2BR/RON,sp value of 194 MW.cm−2." @default.
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• W2208583901 date "2014-06-01" @default.
• W2208583901 modified "2023-09-24" @default.
• W2208583901 title "High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes" @default.
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• W2208583901 doi "https://doi.org/10.1088/0256-307x/31/6/068502" @default.
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