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- W2208588755 abstract "Abstract Single-crystalline nonpolar GaN epitaxial films have been successfully grown on r-plane sapphire (Al2O3) substrates by pulsed laser deposition (PLD) with an in-plane epitaxial relationship of GaN[1-100]//Al2O3[11-20]. The properties of the ~500 nm-thick nonpolar GaN epitaxial films grown at temperatures ranging from 450 to 880 °C are studied in detail. It is revealed that the surface morphology, the crystalline quality, and the interfacial property of as-grown ~500 nm-thick nonpolar GaN epitaxial films are firstly improved and then decreased with the growth temperature changing from 450 to 880 °C. It shows an optimized result at the growth temperature of 850 °C, and the ~500 nm-thick nonpolar GaN epitaxial films grown at 850 °C show very smooth surface with a root-mean-square surface roughness of 5.5 nm and the best crystalline quality with the full-width at half-maximum values of X-ray rocking curves for GaN(11-20) and GaN(10-11) of 0.8° and 0.9°, respectively. Additionally, there is a 1.7 nm-thick interfacial layer existing between GaN epitaxial films and r-plane sapphire substrates. This work offers an effective approach for achieving single-crystalline nonpolar GaN epitaxial films for the fabrication of nonpolar GaN-based devices." @default.
- W2208588755 created "2016-06-24" @default.
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- W2208588755 date "2016-03-01" @default.
- W2208588755 modified "2023-10-17" @default.
- W2208588755 title "Epitaxial growth of nonpolar GaN films on r-plane sapphire substrates by pulsed laser deposition" @default.
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- W2208588755 doi "https://doi.org/10.1016/j.mssp.2015.12.008" @default.
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