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• W2208984913 abstract "The performance of photoresponsive organic FETs (photOFETs) intimately depends on their optical absorption and charge carrier transport property. We report on red light responsive photOFETs based on various device structures utilizing neodymium phthalocyanine (NdPc <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ) as the light sensitive material. PhotOFETs based on planar heterojunction, bulk heterojunction (BHJ), and hybrid planar-BHJ (HPBHJ) with NdPc <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> and C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>60</sub> on poly(vinyl alcohol) (PVA) and SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate dielectric were fabricated and characterized. Among various device structures, HPBHJ-photOFET on PVA dielectric showed the best performance. For the 650-nm-red light illumination, an ultrahigh photoresponsivity of 108 A/W and a maximum photosensitivity of 3.75×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sup> were obtained. The ultrahigh enhancement of the photoresponsivity for HPBHJ-photOFET is resulted from high absorption coefficient of NdPc <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> in the red light region, high dissociation efficiency of the photogenerated excitons, and high electron mobility of C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>60</sub> layer grown on PVA." @default.
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• W2208984913 date "2016-01-01" @default.
• W2208984913 modified "2023-09-26" @default.
• W2208984913 title "Toward Ultrahigh Red Light Responsive Organic FETs Utilizing Neodymium Phthalocyanine as Light Sensitive Material" @default.
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• W2208984913 doi "https://doi.org/10.1109/ted.2015.2497353" @default.
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