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- W2210135655 abstract "The etching kinetics and electrochemistry of in aqueous solutions were studied. For solutions with a low ratio, etch rates in the dark depend only on the concentration and are similar for n‐type and p‐type. Illumination strongly increases the etch rate of n‐type material but has no effect on p‐type dissolution. From current and impedance measurements, it was concluded that CrVI reduction gives rise to a passivating film on , which inhibits further hole injection from the oxidizing agent. The limiting quantum efficiencies for CrVI reduction at illuminated p‐type electrodes and for dissolution at n‐type electrodes are significantly greater than unity. At higher ratios the etch rate of both n‐ and p‐type is determined by CrVI diffusion in solution. Conclusions concerning the etching mechanism are drawn on the basis of these results." @default.
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- W2210135655 date "1985-12-01" @default.
- W2210135655 modified "2023-09-27" @default.
- W2210135655 title "The Mechanism of GaAs Etching in CrO3 ‐ HF Solutions: I . Experimental Results" @default.
- W2210135655 doi "https://doi.org/10.1149/1.2113715" @default.
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