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- W2212422783 abstract "The effect of epitaxial layer thickness on electrical characteristics of two Ti/n-Al0.33Ga0.67As Schottkybarrier diodes was studied in the temperature range of 300-420 K. Comparing the current-voltage (I-V)characteristics of two samples with epitaxial layer thicknesses of 2 mu m and 1.5 mu m discloses thatthe device with a thinner epitaxial layer has a higher barrier height and hence a lower reverse current.Specifically, we found that increasing the Al0.33Ga0.67As thickness from 1.5 mu m to 2 mu m wouldlower the value of the barrier height by similar to 12% at 300 K. We associated such retrogression ofthe electrical quality to the presence of deep level traps in the Si:AlxGa1-xAs layer. For both sampleswe found that the effective barrier height decreases with increasing the annealing temperature. Yet, thesample with a thinner layer showed more stability and less temperature dependence. (C) 2015 TheAuthors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license(http://creativecommons.org/licenses/by-nc-nd/4.0/)." @default.
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- W2212422783 date "2016-01-01" @default.
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- W2212422783 title "Effect of epitaxial layer thickness on the electrical properties of Ti/n-AlGaAs grown by MBE" @default.
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- W2212422783 doi "https://doi.org/10.1016/j.rinp.2015.12.009" @default.
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