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• W2213235058 abstract "A 75 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> low power 64 Gb MLC NAND flash memory capable of 30 MB/s program throughput and 533 MB/s data transfer rate at 1.8 V supply voltage is developed in 15 nm CMOS technology. 36% power reduction from 3.3 V design is achieved by a new pumping scheme. New low current peak features reduce a multi-die concurrent programming peak by 65% for 4-die case, and an erase verifying peak by 40%, respectively. Nanoscale transistors reducing bit-line discharge time by 70% is introduced to improve performance." @default.
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• W2213235058 date "2016-01-01" @default.
• W2213235058 modified "2023-10-03" @default.
• W2213235058 title "A Low Power 64 Gb MLC NAND-Flash Memory in 15 nm CMOS Technology" @default.
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• W2213235058 doi "https://doi.org/10.1109/jssc.2015.2458972" @default.
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