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- W2213235526 abstract "The chapter discusses how the shape of the solid body and inhomogeneities of the conductivity give rise to a change of the resistance in a magnetic field. Experimental magnetoresistance results for the different III–V compounds are discussed and band structure and transport mechanisms are discussed. If one knows the effective mass of the electrons in the crystal and the collision probability—that is, the correlation of the energy of the colliding electron with the time between two collisions with the lattice, as well as the distribution of the charge carriers in the allowed energy states in k-space, then the Hall angle and resistance in the magnetic field—that is, the ratio of electrical field strength in direction of the current to the current density, can be calculated. The shape and inhomogeneities of the specimen being measured can cause a change in resistance in a magnetic field that is different from what would be observed in a homogeneous semiconductor. For materials with high electron mobility, these effects are very large and depend only on the Hall angle, but not on other parameters of the semiconductor." @default.
- W2213235526 created "2016-06-24" @default.
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- W2213235526 date "1966-01-01" @default.
- W2213235526 modified "2023-09-27" @default.
- W2213235526 title "Chapter 10 Magnetoresistance" @default.
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- W2213235526 doi "https://doi.org/10.1016/s0080-8784(08)62383-2" @default.
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