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- W221345181 abstract "Unanalyzed ion implantation procedure (AMI technique) in association with incoherent light scanning annealing in the solid phase regime has been experimented to obtain solar cells. Silicon single crystals have been used to get a better understanding of the process and to make direct comparison with other doping process. The main results of the characterization of the doped layer are: the carrier concentration profile shows a maximum of 3-4 x 10/sup 20/ cm/sup -3/ active ions; the values of carrier mobility are similar to these obtained by furnace annealing. Solar cells test at AM1 show promising values for efficiency. These results have been compared to AMI procedure followed by a laser pulsed annealing in the liquid phase regime and to classical ion implantion solid phase annealed with the incoherent light." @default.
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- W221345181 date "1982-09-01" @default.
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- W221345181 title "Unanalyzed ion implantation procedure with incoherent light scanning annealing for silicon solar cells manufacturing" @default.
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