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- W2214117066 abstract "We have demonstrated dramatic improvement in the quality of selective-area GaN nanowire growth by controlling the polarity of the underlying nucleation layers. In particular, we find that N-polarity is beneficial for the growth of large ordered nanowire arrays with arbitrary spacing. Herein, we present techniques for obtaining and characterizing polarity-controlled nucleation layers on Si (111) substrates. An initial AlN layer, which is demonstrated to adopt Al- (N-)polarity for N- (Al-)rich growth conditions, is utilized to configure the polarity of subsequently grown GaN layers as determined by piezoresponse force microscopy (PFM), polarity-dependent surface reconstructions, and polarity-sensitive etching. Polarity-dependent surface reconstructions observed in reflection high-energy electron diffraction (RHEED) patterns were found to be particularly useful for in situ verification of the nucleation layer polarity, prior to mask deposition, patterning, and selective-area regrowth of the GaN NW arrays. N-..." @default.
- W2214117066 created "2016-06-24" @default.
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- W2214117066 date "2015-12-31" @default.
- W2214117066 modified "2023-10-18" @default.
- W2214117066 title "Polarity-Controlled GaN/AlN Nucleation Layers for Selective-Area Growth of GaN Nanowire Arrays on Si(111) Substrates by Molecular Beam Epitaxy" @default.
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- W2214117066 doi "https://doi.org/10.1021/acs.cgd.5b00910" @default.
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