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- W2214507913 abstract "The characteristics of sputtered electrodes and the ferroelectric reliability of (PZT) thin-film capacitors for memory application in relation to the oxygen content in the electrodes were investigated. The PZT thin films of thickness were deposited on electrodes. Both Pt and PtO phases coexist and a compressive stress is also induced in the electrode after rapid thermal annealing (RTA) at . The polarization-switching characteristics, including polarization value and switching rate of PZT capacitor, are improved by using the as electrodes, especially for the bottom electrode, in comparison to that made with Pt electrodes. In addition to the enhancement in polarization-switching characteristics, the properties of fatigue endurance were tested at room temperature. High fatigue endurance (97% of initial remnant polarization remains after ) can also be achieved for the capacitors having both top and bottom electrodes made with having a high oxygen content." @default.
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- W2214507913 date "2006-01-01" @default.
- W2214507913 modified "2023-10-17" @default.
- W2214507913 title "Enhancement in Ferroelectric Properties of Pb(Zr[sub 0.4]Ti[sub 0.6])O[sub 3] Thin-Film Capacitors with PtO[sub x] Electrodes" @default.
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- W2214507913 doi "https://doi.org/10.1149/1.2192747" @default.
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