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- W2215118093 abstract "The physical mechanism of low-thermal-budget Au-free ohmic contacts to AlGaN/GaN heterostructures is systematically investigated with current-voltage, high-resolution transmission electron microscopy, and temperature-dependent contact resistivity characterizations. With a low annealing temperature of 600 °C, pre-ohmic recess etching of the AlGaN barrier down to several nanometers is demonstrated to be an effective method to reduce the contact resistance between Ti/Al/Ti/W ohmic metals and AlGaN/GaN heterostructures. However, further over recess of the AlGaN barrier leads to only sidewall contact to 2D electron gas channel and thus degraded contact performance. It is verified by temperature-dependent contact resistivity measurements that field emission (tunneling) dominates the current transport mechanism in Au-free ohmic contacts with AlGaN barrier partially and over recessed, while both field emission and thermionic emission contribute to traditional Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures that annealed at high temperature (850 °C)." @default.
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- W2215118093 date "2015-12-28" @default.
- W2215118093 modified "2023-10-15" @default.
- W2215118093 title "Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing" @default.
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- W2215118093 doi "https://doi.org/10.1063/1.4939190" @default.
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