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- W2215746564 abstract "Abstract We fabricated the light-emitting diodes (LEDs) consisting of n-InN/p-NiO/p-Si heterostructure by using plasma-assisted molecular beam epitaxy (PAMBE) combined with radio frequency (RF) magnetron sputtering. The device exhibited diode-like rectifying current–voltage characteristics and had a turn-on voltage of 2.0 V. Under forward bias, a prominent narrow near infrared (NIR) emission peaked around 1565 nm was observed at room temperature. The NIR emission was demonstrated to come from the band-edge emission of InN layer. Moreover, the study of the LED in terms of the stability and efficiency were also discussed in detail." @default.
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- W2215746564 date "2016-05-01" @default.
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- W2215746564 title "Near infrared light-emitting diodes based on n-InN/p-NiO/p-Si heterojunction" @default.
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- W2215746564 doi "https://doi.org/10.1016/j.jlumin.2015.12.048" @default.
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