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• W2217081898 abstract "In this paper, the effect of silicon body thickness (TSi) and silicon body width (WSi) variation on DC characteristics in 100 nm gate length silicon-on-insulator (SOI) junctionless (JL) and junction transistors has been investigated by using numerical simulations. The digital figure-of-merits characteristics such as threshold voltage (VTH), on-current, subthreshold voltage, and drain-induced-barrier-lowering are the main parameters that have been investigated. Based on the simulations, the JT device is less sensitive to variation of TSi and WSi compared to JLT." @default.
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• W2217081898 date "2015-08-01" @default.
• W2217081898 modified "2023-09-25" @default.
• W2217081898 title "Impact of size variation in junctionless vs junction planar SOI n-MOSFET transistor" @default.
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• W2217081898 doi "https://doi.org/10.1109/rsm.2015.7354983" @default.
• W2217081898 hasPublicationYear "2015" @default.
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