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• W2217544272 abstract "Interstitial hydrogen is used to passivate defects in upgraded metallurgical grade (UMG) Czockralski silicon. It is observed that the quality of the UMG material can be improved progressively, with the passivated defects appearing to be stable to subsequent light soaking. New defects however continue to form for a prolonged period of light soaking, requiring subsequent further hydrogen passivation to restore the open circuit voltages to over 700 mV for the UMG wafers. By repeatedly applying the advanced hydrogenation process, the quality and stability of UMG wafers are improved to the point of being comparable to that for Czockralski wafers produced from semiconductor grade silicon purified by the Siemens Process." @default.
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• W2217544272 date "2015-06-01" @default.
• W2217544272 modified "2023-09-26" @default.
• W2217544272 title "Stability of hydrogen passivated UMG silicon with implied open circuit voltages over 700mV" @default.
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• W2217544272 doi "https://doi.org/10.1109/pvsc.2015.7355739" @default.
• W2217544272 hasPublicationYear "2015" @default.
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