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• W2218369040 abstract "We demonstrate a room temperature semiconductor-metal transition in thin film MoTe2 engineered by strain. Reduction of the 2H-1T' phase transition temperature of MoTe2 to room temperature was realized by introducing a tensile strain of 0.2%. The observed first-order SM transition improved conductance ∼10 000 times and was made possible by an unusually large temperature-stress coefficient, which results from a large volume change and small latent heat. The demonstrated strain-modulation of the phase transition temperature is expected to be compatible with other TMDs enabling the 2D electronics utilizing polymorphism of TMDs along with the established materials." @default.
• W2218369040 created "2016-06-24" @default.
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• W2218369040 date "2015-12-31" @default.
• W2218369040 modified "2023-10-18" @default.
• W2218369040 title "Room Temperature Semiconductor–Metal Transition of MoTe₂ Thin Films Engineered by Strain" @default.
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• W2218369040 doi "https://doi.org/10.1021/acs.nanolett.5b03481" @default.
• W2218369040 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/26713902" @default.
• W2218369040 hasPublicationYear "2015" @default.
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