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- W2218789828 abstract "The use of a tirmethylindium-trimethylarsenic adduct, which is synthesised in the gas phase, as the In source, and AsH3 as the primary As source is reported for the growth of high-quality Ga1−xInxAs (x<0.20). The improved epitaxial layers have higher mobilities and lower background doping than those grown with trimethylarsenic as the sole As source. The effects of elevated growth temperatures are also reported." @default.
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- W2218789828 date "1981-01-01" @default.
- W2218789828 modified "2023-09-26" @default.
- W2218789828 title "Improved mobility in OM-VPE-grown Ga1−xInxAs" @default.
- W2218789828 doi "https://doi.org/10.1049/el:19810488" @default.
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