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• W2223448960 abstract "Preparation of semiconductor surfaces by laser pulses of high intensity is one of the most promising techniques for microelectronics. The best studied applications are activation of implanted or surface-deposited dopants and recrystallization of amorphized (implantation damaged) surfaces. In spite of their technological importance the physical mechanisms underlying these highly non-equilibrium processes are still not understood. A widespread controversy exists about the way, in which the initially excited electron-hole plasma induces the annealing of the material." @default.
• W2223448960 created "2016-06-24" @default.
• W2223448960 creator A5013518166 @default.
• W2223448960 date "1988-01-01" @default.
• W2223448960 modified "2023-09-24" @default.
• W2223448960 title "Nonequilibrium Phonons in Semiconductors: Power Dissipation of Highly Laser- Excited Electron-Hole Plasmas" @default.
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• W2223448960 doi "https://doi.org/10.1007/978-1-4899-2382-0_24" @default.
• W2223448960 hasPublicationYear "1988" @default.
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