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• W2224229842 endingPage "067802" @default.
• W2224229842 startingPage "067802" @default.
• W2224229842 abstract "Phosphorous-doped hydrogenated amorphous Si/SiO2 multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system. The microstructural and luminescence properties of the samples are characterized after annealing at various temperatures. Under the onset crystallization temperature 800–900°C, a strong subband infrared light emission in the range 1.1–1.8 μm is observed at room temperature instead of the usually observed visible light emission. This subband infrared emission is gradually enhanced with the increase of phosphorus doping concentration, which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms." @default.
• W2224229842 created "2016-06-24" @default.
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• W2224229842 date "2011-06-01" @default.
• W2224229842 modified "2023-10-05" @default.
• W2224229842 title "Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO ₂ Multilayers at Room Temperature" @default.
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• W2224229842 doi "https://doi.org/10.1088/0256-307x/28/6/067802" @default.
• W2224229842 hasPublicationYear "2011" @default.
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