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• W2225803014 abstract "Thin films of titanium dioxide (TiO2) have a variety of important applications in microelectronics, such as dielectric capacitor layers in DRAMs and gate dielectric layers in MOSFETS. TiO2 is also a constituent in a number of multi-component metal oxides used in microelectronics applications, such as the high-κ dielectric oxide (Ba,Sr)TiO3 for DRAM applications and the ferroelectric perovskites Pb(Zr,Ti)O3 and Bi4Ti3O12 for use in infra-red detectors and non-volatile ferroelectric random access memories (NV-FeRAMs). ALD is being increasingly used for the deposition of metal oxide thin films, as it has the advantages of precise thickness and composition control at the atomic level, high film uniformity, and excellent conformal step coverage on non-planar substrates and highaspect ratio device geometries, a particularly important requirement in microelectronics applications. There is currently a major research effort aimed at achieving ALD at relatively high substrate temperatures (≥ 300C), as this reduces the level of impurities (eg. OH) in the films, and gives denser films and better conformal step-coverage of high-aspect ratio device structures such as trench and stack DRAMs. Although a number of precursors have been investigated for the ALD of TiO2, none of these has proved entirely satisfactory, For instance, Ti-halides are corrosive and liberate HCl, an etchant for Si, as a by-product during layer growth. Although [Ti(OMe)4] has allowed the ALD of TiO2 at temperatures as high as 300C [1], titanium alkoxides Ti(OR)4 (OR = OEt, OPr, OBu) generally have relatively low thermal stabilities and fail to give fully self-limiting ALD due to decomposition of the alkoxide group by βhydride elimination. Although titanium alkylamides, such as [Ti(NMe2)4], can be used for the ALD of high purity TiO2, thermal decomposition of the precursor limits the self-limiting ALD process to substrate temperatures of 225C or below. However, by the introduction of the aromatic ligand, [MeCp], a significantly more thermally stable complex [(MeCp)Ti(NMe2)3] was obtained, which allowed self-limiting ALD at substrate temperatures as high as 325C [2]. Titanium complexes containing the heterocyclic pyrrolyl ligand, [C4H4N], have been known for some time, but none have been investigated as MOCVD or ALD precursors and little is known about their thermal stability. In this paper we report the use of the new Ti-2,5-dimethylpyrrolyl complexes [(2,5Me2C4H2N)Ti(NMe2)3] (Fig. 1) and [(2,5Me2C4H2N)Ti(OPr)3]2 (Fig. 2) as precursors for the deposition of TiO2 thin films by liquid injection ALD, and the growth results and film characterisation data (AES, SEM, XRD) are compared to the equivalent data obtained using [(MeCp)Ti(NMe2)3]." @default.
• W2225803014 created "2016-06-24" @default.
• W2225803014 date "2009-01-01" @default.
• W2225803014 modified "2023-10-14" @default.
• W2225803014 title "Deposition of TiO2 Thin Films by Liquid Injection ALD Using New 2,5-Dimethylpyrrolyl Titanium-Alkylamide and -Alkoxide Precursors" @default.
• W2225803014 doi "https://doi.org/10.1149/ma2009-02/34/2588" @default.
• W2225803014 hasPublicationYear "2009" @default.
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