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- W2227652308 endingPage "972" @default.
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- W2227652308 abstract "Lu2O3 was used as the buffer layer of the epitaxy of ZnO film on Si substrate by plasma-assisted molecular beam epitaxy. X-ray photoelectron spectroscopy was used to determine the band alignment at ZnO/Lu2O3 interface. The conduction band offset (CBO) and valence band offset (VBO) of the ZnO/Lu2O3 heterojunction are calculated to be 1.77 eV and 0.66 eV, respectively, with a type-I band alignment. And the ratio of CBO and VBO (ΔEc/ΔEv) is estimated to be about 2.68. The large ΔEv and ΔEc reveal that Lu2O3 is an ideal barrier layer in Si-based ZnO optoelectronic devices." @default.
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- W2227652308 date "2016-02-01" @default.
- W2227652308 modified "2023-10-18" @default.
- W2227652308 title "X-ray photoelectron spectroscopy study of energy-band alignments of ZnO on buffer layer Lu2O3" @default.
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- W2227652308 doi "https://doi.org/10.1016/j.physleta.2015.12.038" @default.
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