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• W2228914114 abstract "摘要 研究了接触效应对有机薄膜晶体管性能的影响.首先在n型重掺杂Si片上制备了以MOO3修饰的Al电极为源漏电极的Pentacene基OTFTs(organic thin film transistors),器件场效应迁移率μef达到0.42 cm2/V ·s,阈值电压VT为-9.16 V,开关比4.7×103.通过中间探针法,对器件电势分布做了定性判断 关键词: 有机薄膜晶体管 / 场效应迁移率 / 接触效应 / 电荷漂移 Abstract The contact effect on the performances of organic thin film transistors (OTFTs) is studied here. We fabricate Bottom-gated top-contact Pentacene-OTFTs on heavily doped n type Silicon wafers with using Al modified by MoO3 as source and drain electrodes. Field effect mobility μef of the OTFT reaches 0.42cm2/V ·s,the threshold voltage and the on/off current ratio arrive at -5.0 V and 4.7×103 respectively. The electric potential distribution in the channel is qualitively investigated by means of middle probe method (MPM) and the output curve is simulated by the charge drift method. Considering the contact effect,the μef is greatly improved to 1.1 cm2/V ·s,which indicates the importance of the contact engineering in OTFTs. Keywords: organic thin film transistor / field effect mobility / contact effect / charge drift 作者及机构信息 孙钦军, 徐征, 赵谡玲, 张福俊, 高利岩, 田雪雁, 王永生 1. 北京交通大学光电子技术研究所,发光与光信息技术教育部重点实验室,北京 100044 基金项目: 国家自然科学基金(批准号:10774013,10804006,10974013,60978060),国家高技术研究发展计划(批准号:2006AA03Z0412),教育部博士点基金(批准号20070004024),博士点新教师基金(批准号:20070004031),北京市科技新星计划(批准号:2007A024),国家杰出青年科学基金(批准号:60825407)资助的课题. Authors and contacts Sun Qin-Jun, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Gao Li-Yan, Tian Xue-Yan, Wang Yong-Sheng 1. Institude of Optoelectronics Technology,Beijing Jiaotong University,Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University),Ministry of Education,Beijing 100044,China 参考文献 [1] Sundar V C,Zaumseil J,Podzorov V,Menard E,Willett R L,Someya T,Gershenson M E,Rogers J A 2004 Science 303 1644 [2] Facchetti A,Yoon M H,Marks T J 2005 Adv. Mater. 17 1750 [3] Bana D,Han S,Lu Z H,Oogarah T,Spring T A J,Liu H C 2007 Appl. Phys. Lett. 90 093108 [4] Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Huang J Z,Song D D,Zhu H N,Huang J Y,Xu X R 2008 Acta Phys. Sin. 57 5911 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、姜薇薇、黄金昭、宋丹丹、朱海娜、黄金英、徐叙瑢 2008 物理学报 57 5911] [5] Yang S Y,Du W S,Qi J R,Lou Z D 2009 Acta Phys. Sin 58 3427 (in Chinese) [杨盛谊、杜文树、齐洁茹、娄志东 2009 物理学报 58 3427] [6] Reese C,Bao Z 2009 Adv. Funct. Mater. 19 763 [7] Liu Y R,Wang Z X,Yu J L,Xu H H 2009 Acta Phys. Sin. 58 8566 (in Chinese) [刘玉荣、王智欣、虞佳乐、徐海红 2009 物理学报 58 8566] [8] Cao J,Hong F,Xing F F,Gu W,Guo X A,Zhang H,Wei B,Zhang J H,Wang J 2010 Chin. Phys. B 19 037106 [9] Zou J H,Lan L F,Xu R X,Yang W,Peng J B 2010 Acta Phys. Sin. 59 1275 (in Chinese) [邹建华、兰林锋、徐瑞霞、杨 伟、彭俊彪 2010 物理学报 59 1275] [10] Yuan G C,Xu Z,Zhao S L,Zhang F J,Jiang W W,Song D D,Zhu H N,Li S Y,Huang J Y,Huang H,Xu X R 2008 Chin. Phys. B 17 1887 [11] Yuan G C,Xu Z,Zhao S L,Zhang F J,Xu N,Sun Q J,Xu X R 2009 Acta Phys. Sin. 58 4941 (in Chinese) [袁广才、徐 征、赵谡玲、张福俊、许 娜、孙钦军、徐叙瑢 2009 物理学报 58 4941] [12] Torsi L,Marinelli F,Angione M D,Dell'Aquila A,Cioffi N, Giglio E D,Sabbatini L 2009 Org. Electron. 10 233 [13] Yuan G C,Xu Z,Gong C,Cai Q J,Lu Z S,Shi J S,Zhang F J,Zhao S L,Xu N,Li C M 2009 Appl. Phys. Lett. 94 153308 [14] Lee S,Koo B,Shin J,Lee E,Park H 2006 Appl. Phys. Lett. 88 162109 [15] Jurchescu O D,Baas J,Palstra T T M 2004 Appl. Phys. Lett. 84 3061 [16] Liu G,Liu M,Wang H,Shang L W,Ji Z Y,Liu X H,Liu J 2009 Chin. Phys. B 18 3530 [17] Li Y C,Lin Y J,Wei C Y,Lin Z X,Wen T C,Chang M Y,Tsai C L,Wang Y H 2009 Appl. Phys. Lett. 95 163303 [18] Petrovic A,Pavllica E,Bratina G,Carpentiero A,Tormen M W 2009 Synth. Met. 159 1210 [19] Bai Y,Liu X,Chen L,Khizar-ul-Haq,Khan M A,Zhu W Q,Jiang X Y,Zhang Z L 2007 Microelectr. J. 38 1185 [20] Chu C W,Li S H,Chen C W,Shrotriya V,Yang Y 2005 Appl. Phys. Lett. 87 193508 [21] Yuan G C,Xu Z,Zhao S L,Zhang F J,Xu N,Tian X Y,Xu X R 2009 Chin. Phys. B 18 3990 [22] Celle C,Suspene C,Simonato J,Lenfant S,Ternisien M,Vuillaume D 2009 Org. Electron. 10 119 [23] Lee W H,Wang C C,Ho J C 2009 Thin Solid Film 517 5305 [24] Kwon J H,Shin S,Kim K H,Cho M J,Kim K N,Choi D H,Ju B K 2009 Appl. Phys. Lett. 94 13506 [25] Yun Y,Pearson C,Petty M C 2009 J. Appl. Phys. 105 34508 [26] Lara Bullejos P L,Jimenez Tejada J A,Rodriguez-Bolivar,Deen M J,Marinov O 2009 J. Appl. Phys. 105 084516 [27] Pesavento P V,Chesterfield R J,Newman C R,Frisbie C D 2004 J. Appl. Phys. 96 7312 [28] Street R A,Salleo A 2002 Appl. Phys. Lett. 81 2887 施引文献" @default.
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• W2228914114 title "Contact effect in organic thin film transistors" @default.
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