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• W2229384940 abstract "Abstract In this paper, Sb 52 Se 36 Te 12 is proposed for its good data retention and extremely rapid crystallization speed. Compared with usual Ge 2 Sb 2 Te 5 , Sb 52 Se 36 Te 12 exhibits a higher crystallization temperature of 196  ○ C, a better thermal stability, indicating a brilliant performance for data retention of 10 years at 121  ○ C, and a much faster switching speed, which is demonstrated by an electric pulse as short as 8 ns that can fulfil the set operation. Thus, Sb 52 Se 36 Te 12 could be expected to have a wide application in the fields of phase change memory with rapid crystallization speed and high-temperature data retention." @default.
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• W2229384940 date "2015-12-01" @default.
• W2229384940 modified "2023-09-25" @default.
• W2229384940 title "Sb52Se36Te12 material with high-temperature data retention coupled with rapid crystallization speed for phase change application" @default.
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• W2229384940 doi "https://doi.org/10.1016/j.apsusc.2015.08.215" @default.
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