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- W2229817285 abstract "In the following sections, the status of the various III-V-based projects will be discussed. The III-V gas source molecular beam epitaxy system is utilized for the development of GaAs-based and InP-based bipolar cascade lasers, and for the fabrication of GaAs-based devices implementing oneand twodimensional photonic bandgap crystals within their structure. The development of bipolar cascade lasers represents a collaboration between the research groups under the direction of Prof. Rajeev Ram and Prof. Leslie Kolodziejski. The research projects utilizing photonic crystals represent the combined efforts of the research groups led by Professors John D. Joannopoulos (Theory), Leslie A. Kolodziejski (Fabrication), Erich P. Ippen (Measurement), and Henry I. Smith (Fabrication). The complexity of the design, fabrication and characterization of these photonic crystal-based structures necessitates a strong interaction between the various research groups." @default.
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- W2229817285 date "1997-01-01" @default.
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- W2229817285 title "Epitaxial Growth and Processing of Compound Semiconductors" @default.
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