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• W2230486046 abstract "Silicon germanium tin alloys were grown directly on Si substrates using a cold-wall ultrahigh-vacuum chemical vapor deposition system at 300 °C, where commercially available precursors of silane, germane, and stannic chloride were used to grow the epitaxial layers. The crystallinity and growth quality of the SiyGe1−x−ySnx films were investigated through material characterization methods including x-ray diffraction, scanning electron microscopy, energy-dispersive x-ray spectroscopy, and transmission electron microscopy. Rutherford backscattering measurements show that 2%–5% of the Sn and 3%–5% of the Si were successfully incorporated. Investigation of the material growth parameters shows that a flow rate of stannic chloride higher than 1 sccm results in etching of the film, while an increase in the silane flow rate results in amorphous film growth. The photoluminescence study shows clear emission peaks ascribed to direct and indirect bandgap transitions, which are in agreement with theoretical calculations." @default.
• W2230486046 created "2016-06-24" @default.
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• W2230486046 date "2015-12-01" @default.
• W2230486046 modified "2023-09-24" @default.
• W2230486046 title "Si_yGe_1−x−ySn_x films grown on Si using a cold-wall ultrahigh-vacuum chemical vapor deposition system" @default.
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• W2230486046 doi "https://doi.org/10.1116/1.4936892" @default.
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