FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W2235130121> ?p ?o ?g. }

• W2235130121 endingPage "387" @default.
• W2235130121 startingPage "369" @default.
• W2235130121 abstract "Chemical and electronic properties of dielectric oxide interfaces as obtained using photoelectron spectroscopy are presented and discussed. Interface preparation includes the deposition of metals onto dielectrics and vice versa as well as the effect of postdeposition treatments. Most interfaces are not abrupt as either reduction in the oxide surface occurs during metal deposition or oxidation of the metal substrate is induced by oxide deposition. The Schottky barrier heights at these interfaces are strongly affected by the interface chemistry. Reactive interfaces exhibit a strong Fermi level pinning due to defect formation. Nonreactive interfaces, which are obtained by depositing metallic oxide electrodes, exhibit an unpinned Schottky–Mott‐like barrier formation. Barrier heights can therefore be modified by more than 1 eV with suitable electrode material and processing. Postdeposition oxidation and reduction treatments and ferroelectric polarization can lead to comparable changes of barrier height. Interface studies between dielectric oxides reveal the dependence of valence band maximum and conduction band minimum energies. Due to transitivity of band alignment, these can be arranged on an absolute energy scale. The range of Fermi level positions in dielectric oxides, which can also be obtained from photoelectron spectroscopy and which is limited by intrinsic defect formation, is comparable when the oxides aligned on the energy scale determined by the photoemission experiments. The band alignment therefore indicates if a material can be made n ‐type or p ‐type by donor or acceptor doping. The range of Fermi levels in the oxides corresponds also with the range of the Fermi levels at oxide/metal interfaces." @default.
• W2235130121 created "2016-06-24" @default.
• W2235130121 creator A5066434086 @default.
• W2235130121 date "2016-01-14" @default.
• W2235130121 modified "2023-09-30" @default.
• W2235130121 title "Interface Properties of Dielectric Oxides" @default.
• W2235130121 cites W105286879 @default.
• W2235130121 cites W1128981796 @default.
• W2235130121 cites W135918684 @default.
• W2235130121 cites W1485113879 @default.
• W2235130121 cites W1492977420 @default.
• W2235130121 cites W1504778811 @default.
• W2235130121 cites W1526289765 @default.
• W2235130121 cites W1542630147 @default.
• W2235130121 cites W1606406114 @default.
• W2235130121 cites W1636507388 @default.
• W2235130121 cites W1675460008 @default.
• W2235130121 cites W1709694534 @default.
• W2235130121 cites W1727819547 @default.
• W2235130121 cites W1728647200 @default.
• W2235130121 cites W1825780498 @default.
• W2235130121 cites W1860636383 @default.
• W2235130121 cites W1927032232 @default.
• W2235130121 cites W1936129022 @default.
• W2235130121 cites W1964474098 @default.
• W2235130121 cites W1965059618 @default.
• W2235130121 cites W1965080833 @default.
• W2235130121 cites W1966303088 @default.
• W2235130121 cites W1966955846 @default.
• W2235130121 cites W1967519902 @default.
• W2235130121 cites W1970726468 @default.
• W2235130121 cites W1974141948 @default.
• W2235130121 cites W1975238011 @default.
• W2235130121 cites W1975413256 @default.
• W2235130121 cites W1976949138 @default.
• W2235130121 cites W1977577814 @default.
• W2235130121 cites W1977687753 @default.
• W2235130121 cites W1979288999 @default.
• W2235130121 cites W1980929018 @default.
• W2235130121 cites W1981395346 @default.
• W2235130121 cites W1982898953 @default.
• W2235130121 cites W1983772671 @default.
• W2235130121 cites W1985035555 @default.
• W2235130121 cites W1985151300 @default.
• W2235130121 cites W1985416278 @default.
• W2235130121 cites W1985539693 @default.
• W2235130121 cites W1986250062 @default.
• W2235130121 cites W1987237639 @default.
• W2235130121 cites W1987387870 @default.
• W2235130121 cites W1987632676 @default.
• W2235130121 cites W1987931986 @default.
• W2235130121 cites W1990393409 @default.
• W2235130121 cites W1990757633 @default.
• W2235130121 cites W1991533315 @default.
• W2235130121 cites W1993317923 @default.
• W2235130121 cites W1995245815 @default.
• W2235130121 cites W1997576103 @default.
• W2235130121 cites W2000389156 @default.
• W2235130121 cites W2001589884 @default.
• W2235130121 cites W2001770153 @default.
• W2235130121 cites W2002590365 @default.
• W2235130121 cites W2004689555 @default.
• W2235130121 cites W2004775394 @default.
• W2235130121 cites W2004967694 @default.
• W2235130121 cites W2005379798 @default.
• W2235130121 cites W2006688996 @default.
• W2235130121 cites W2007566610 @default.
• W2235130121 cites W2007969261 @default.
• W2235130121 cites W2011098290 @default.
• W2235130121 cites W2011459725 @default.
• W2235130121 cites W2016787428 @default.
• W2235130121 cites W2017062950 @default.
• W2235130121 cites W2017163198 @default.
• W2235130121 cites W2017602893 @default.
• W2235130121 cites W2018001505 @default.
• W2235130121 cites W2019017977 @default.
• W2235130121 cites W2019581400 @default.
• W2235130121 cites W2022900048 @default.
• W2235130121 cites W2025905384 @default.
• W2235130121 cites W2026605586 @default.
• W2235130121 cites W2028955839 @default.
• W2235130121 cites W2029526589 @default.
• W2235130121 cites W2030013421 @default.
• W2235130121 cites W2030547735 @default.
• W2235130121 cites W2030735318 @default.
• W2235130121 cites W2031882896 @default.
• W2235130121 cites W2032018678 @default.
• W2235130121 cites W2032100417 @default.
• W2235130121 cites W2032113381 @default.
• W2235130121 cites W2032378255 @default.
• W2235130121 cites W2035099916 @default.
• W2235130121 cites W2035501778 @default.
• W2235130121 cites W2036926759 @default.
• W2235130121 cites W2037185180 @default.
• W2235130121 cites W2038104609 @default.
• W2235130121 cites W2040028519 @default.
• W2235130121 cites W2040165161 @default.
• W2235130121 cites W2041601316 @default.

• next