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- W2235773925 endingPage "01AE03" @default.
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- W2235773925 abstract "Abstract Stacking-fault-free and planar defect (twinning plane)-free In-catalyzed Si nanowires (NWs) are essential for carrier transport and nanoscale device applications. In this article, In-catalyzed, vertically aligned, and cone-shaped Si NWs on Si(111) were grown successfully, in the vapor–liquid–solid (VLS) mode. In particular, the influences of substrate temperature ( T S ) and cooling rate (Δ T S /Δ t ) on the formation of planar defects, twinning planes along the [112] direction, and stacking faults in Si NWs were investigated. When T S was decreased from 600 °C to room temperature at a rate of 100 °C/240 s after Si NW growth, twinning plane defects perpendicular to the substrate and along different segments of (111)-oriented Si NWs were observed. Finally, one simple model was proposed to explain the stacking fault formation as well as Si NW length limitation due to the In-nanoparticle (In-NP) migration, and root causes of the twinning plane defects in the Si-NWs." @default.
- W2235773925 created "2016-06-24" @default.
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- W2235773925 date "2015-10-30" @default.
- W2235773925 modified "2023-10-06" @default.
- W2235773925 title "Investigation of crystallinity and planar defects in the Si nanowires grown by vapor–liquid–solid mode using indium catalyst for solar cell applications" @default.
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- W2235773925 doi "https://doi.org/10.7567/jjap.55.01ae03" @default.
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