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• W2236711287 endingPage "42" @default.
• W2236711287 startingPage "42" @default.
• W2236711287 abstract "Stopping the plasma-enhanced chemical vapor deposition (PECVD) once and maintaining the film in a vacuum for 30 s were performed. This was done several times during the formation of a film of i-layer microcrystalline silicon (μc-Si:H) used in thin-film silicon tandem solar cells. This process aimed to reduce defect regions which occur due to collision with neighboring grains as the film becomes thicker. As a result, high crystallinity (Xc) of μc-Si:H was obtained. Eventually, a solar cell using this process improved the conversion efficiency by 1.3% (0.14 points), compared with a normal-condition cell. In this paper, we propose an easy method to improve the conversion efficiency with PECVD." @default.
• W2236711287 created "2016-06-24" @default.
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• W2236711287 date "2016-01-13" @default.
• W2236711287 modified "2023-10-14" @default.
• W2236711287 title "Intermittent Very High Frequency Plasma Deposition on Microcrystalline Silicon Solar Cells Enabling High Conversion Efficiency" @default.
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• W2236711287 doi "https://doi.org/10.3390/en9010042" @default.
• W2236711287 hasPublicationYear "2016" @default.
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