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- W2238505511 abstract "In this paper, we propose a new High-Side nLDMOSFET whose breakdown voltage is over 100 V while meeting the thermal budget for the conventional 0.35㎛ BCD process. The proposed nLDMOSFET has a feature in that the structure comprises a gap of 5.0㎛ between the DEEP N-WELL and the center of the source, the surface of which is implanted by the NADJUST-layer for high breakdown voltage and simultaneously the low specific on-resistance. The computer simulation of the proposed High-Side nLDMOS exhibits BVdss of 120 V and Ron,sp of as low as 2.40 ㏁ㆍ㎠." @default.
- W2238505511 created "2016-06-24" @default.
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- W2238505511 date "2010-06-01" @default.
- W2238505511 modified "2023-09-23" @default.
- W2238505511 title "항복전압 향상을 위한 100V nLDMOS 소자 설계" @default.
- W2238505511 hasPublicationYear "2010" @default.
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