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- W2239883441 abstract "The deep centres are intrinsic or extrinsic complexes or isolated FAs with ground-state levels deep in the band gap, hence their name. They give rise to relatively high-energy transitions whose excited states cannot be described by donor or acceptor EMT. They can be found in some as-grown crystals, but they are also produced by irradiation with h-e particles or γ-rays, or associated with TMs introduced in the crystals. When their concentration is dominant, the resistivity of the material can reach the intrinsic resistivity and classical resistivity measurements are difficult to perform on such materials. These centres are characterized by the position(s) of their energy level(s) in the band gap, by their point-group symmetries, and by their isotopic distributions. In semiconductors, many high-energy absorption lines are also due to the creation of excitons bound to defects whose electronic properties are only roughly understood, but these lines can bring useful information on the nature of these defects, for instance by their electronic isotope shifts or splitting under a uniaxial stress." @default.
- W2239883441 created "2016-06-24" @default.
- W2239883441 creator A5067154507 @default.
- W2239883441 creator A5068375662 @default.
- W2239883441 date "2011-10-27" @default.
- W2239883441 modified "2023-09-25" @default.
- W2239883441 title "Absorption of Deep Centres and Bound Excitons" @default.
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- W2239883441 doi "https://doi.org/10.1007/978-3-642-18018-7_4" @default.
- W2239883441 hasPublicationYear "2011" @default.
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