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- W2240506389 abstract "This work presents the fabrication and characteristics of (p-n-p) (Cu2O/Ps/p-Si) heterojunction device prepared by rapid thermal oxidation technique without any post deposition annealing condition. A 100 nm thick Cu2O nanocrystal thin film was grown on nanocrystallines Silicon (Ps) by rapid photo thermal oxidation of pulsed laser deposited Cu film using a halogen lamp (100W) at 720K for 90s in static air. Surface morphology were investigated and compared with other published results. Dark and illuminated I-V, C-V, spectral responsivity and time constant of (Cu2O/ Ps/ Si) and (Ps/Si) heterojunction were investigated and discussed." @default.
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- W2240506389 date "2014-12-30" @default.
- W2240506389 modified "2023-09-26" @default.
- W2240506389 title "Fabrication and characterization of (Cu2O/Ps/p-Si) nanostructure heterojunction device for photovoltaic application" @default.
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