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- W2241591788 abstract "Its high carrier drift mobility, low band gap and high atomic number make germanium suited for many applications e.g. as channel material in high-speed integrated circuits, material for integration of optical detectors in CMOS devices, substrate for highly efficient solar cells and radiation detectors. Growth of single crystals involves high temperatures while for processing of devices, rapid thermal annealing is often used, both leading to the formation of considerable concentrations of intrinsic defects. These defects will, upon cooling, interact with dopants and/or contaminants and can alter the device properties. The thermodynamic properties of intrinsic defects in Ge are, however, still largely unexplored. One of the methods for obtaining such information is via quenching experiments. Quenching introduces shallow as well as deep-level acceptor-like defects in Ge. The present contribution concentrates on characterization of the deep-level defects by means of Fourier and Laplace Deep Level Transient Spectroscopy (DLTS), using a quenching setup based on infrared lamp heating. The DLTS results are compared with literature data on irradiated and transition metal implanted Ge. Certain deep levels induced by quenching appear to be transition metal related. Temperature dependent Van der Pauw measurements are also performed in order to assess the impact of these deep levels on the sample resistivity." @default.
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- W2241591788 date "2014-01-01" @default.
- W2241591788 modified "2023-10-16" @default.
- W2241591788 title "Deep-level transient spectroscopy study of quenched-in defects in germanium" @default.
- W2241591788 hasPublicationYear "2014" @default.
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