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- W2243355645 abstract "The electrical properties of Gd-doped bismuth titanates Bi 4-x Gd x Ti 3 O 12 ) prepared by a conventional ceramic technique have been investigated. At applied d.c. field below 200V/mm, the current-voltage curve of Gd-doped sample exhibits a negative differential resistance behavior. The conducting filamentary model has been used to explain the negative differential resistance phenomenon in Gd-doped bismuth titanates. The impedance spectrum of Gd sample indicates that both consist of semiconducting grain and moderately insulating grain boundary regions. XRD, SEM and EPMA analyses reveal crystalline phase characterized by a Bi-layered perovskite structure of Bi 4 Ti 3 O 12 and the distribution of every element is uniform. Gd-doped sample exhibites randomly oriented and plate-like morphology." @default.
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- W2243355645 date "2011-11-01" @default.
- W2243355645 modified "2023-10-16" @default.
- W2243355645 title "Electrical Characteristics and Microstructures of Gd-Doped Bi<sub>4</sub>Ti<sub>3</sub>O<sub>12</sub> Ceramics" @default.
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- W2243355645 doi "https://doi.org/10.4028/www.scientific.net/amr.412.314" @default.
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